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DATA SHEET MOS FIELD EFFECT TRANSISTOR
2SK2415,2415-Z
SWITCHING N-CHANNEL POWER MOS FET
Description
The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DRAWINGS (Unit : mm) TO-251 (MP-3)
1.5 -0.1
+0.2
Features
6.5 0.2 5.0 0.2
2.3 0.2 0.5 0.1
* Low on-state resistance
1.6 0.2
1
2
3
1.1 0.2
QUALITY GRADE
Standard
2.3 2.3
7.0 MIN.
* Low Ciss: Ciss = 570 pF TYP.
13.7 MIN.
+0.2
RDS(on)2 = 0.15 MAX. (VGS = 4 V, ID = 4.0 A)
5.5 0.2
RDS(on)1 = 0.10 MAX. (VGS = 10 V, ID = 4.0 A)
4
0.5 -0.1
0.5 -0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
+0.2
Please refer to "Quality Grades On NEC Semiconductor Devices" (Document number: C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applica5tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)Note 1 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche CurrentNote 2 Single Avalanche EnergyNote 2 Note 1 PW 10 s, Duty Cycle 1% 2 Starting Tch = 25C, RG = 25 , VGS = 20 0 V VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 20 8.0 32 20 1.0 150 8.0 6.4 V V
0.8 4.3 MAX.
TO-252 (MP-3Z)
6.5 0.2 5.0 0.2 4
1.5 -0.1
+0.2
0.75
2.3 0.2 0.5 0.1
A W W C A mJ
1
2
3
2.0 MIN.
5.5 0.2 10.0 MAX.
A
1.1 0.2
-55 to +150 C
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D13207EJ2V0DS00 (2nd edition) Date Published August 2004 N CP(K) Printed in Japan
The mark
shows major revised points.
0.7
1.0 MIN. 1.8TYP.
1994
2SK2415,2415-Z
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTIC Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Cut-off Voltage Forward Transfer Admittance Zero Gate Voltage Drain Current Gate Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 570 290 75 5 60 75 40 21 2.0 6.5 1.0 85 200 1.0 5.0 MIN. TYP. 0.07 0.10 1.6 8.4 10 10 MAX. 0.10 0.15 2.0 UNIT V S TEST CONDITIONS VGS = 10 V, ID = 4.0 A VGS = 4 V, ID = 4.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 4.0 A VGS = 10 V VDD = 30 V RG = 10 ID = 8.0 A VDD = 48 V VGS = 10 V IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. 50 VGS = 20 0 V BVDSS VDS L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS
90%
IAS ID VDD
VGS 0 = 1 s Duty Cycle 1%
ID ID
Wave Form
0 10%
10%
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA RL VDD
PG.
50
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Data Sheet D13207EJ2V0DS
2SK2415,2415-Z
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - % PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 24 20 16 12 8 4
80
60
40
20
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse)
ID - Drain Current - A
d ite V) Lim 10 ) = on S S( RD t VG (a
10
PW
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 Pulsed VGS = 10 V VGS = 6 V 24 VGS = 4 V 16
=
10
10
ID(DC) Po
1
1
s 10 m we s rD iss DC ipa tio n Lim
m
0
s
ite
d
ID - Drain Current - A
s
32
8
0.1 0.1
TC = 25C Single Pulse 1 10 100 0 2 4 6 8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V
ID - Drain Current - A
100
10
TA = - 25C 25C 125C
1
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V
Data Sheet D13207EJ2V0DS
3
2SK2415,2415-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
1000 Rth(ch-a) = 125C/W 100
10 Rth(ch-c) = 6.25C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s
100
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 Pulsed 120 100 80 60 40 20 ID = 4.0 A
IyfsI- Forward Transfer Admittance - S
10
TA = - 25C 25C 75C 125C
VDS = 10 V Pulsed
1
0.1
1 ID - Drain Current - A
10
0
5
10
15
20
25
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT 160 Pulsed 140 120 100 80 VGS = 10 V 60 40 20 0 1 10 ID - Drain Current - A 100 VGS = 4 V 2.0
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 1.5
VGS(off) - Gate Cut-off Voltage - V
1.0
0.5
0 - 50 - 25
0 25 50 75 100 125 150
Tch - Channel Temperature - C
4
Data Sheet D13207EJ2V0DS
2SK2415,2415-Z
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 180
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed
160 140 120 100 80 60 40 20 ID = 4.0 A 0 - 50 0 50 100 150 Tch - Channel Temperature - C VGS = 10 V VGS = 4 V
10 10 V
1
VGS = 0 V
0
1.0 VSD - Source to Drain Voltage - V
2.0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
1 000 Ciss
100
td(off)
Coss 100 Crss
tf 10
tr td(on) VDD = 30 V VGS = 10 V RG = 10
10 1 10 VDS - Drain to Source Voltage - V 100
1.0 0.1 1.0 10 ID - Drain Current - A
100
REVERSE RECOVERY TIME vs. DRAIN CURRENT 100
VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 70 60 50 40 30 20 10 0 10 20 30 40 VDS VGS
VGS - Gate to Source Voltage - V
ID = 8.0 A VDD = 48 V
16 14 12 10 8 6 4 2 0
10 0.1 1.0
di/dt = 50 A/ s VGS = 0 V 10
ID - Drain Current - A
QG - Gate Charge - nC
Data Sheet D13207EJ2V0DS
5
2SK2415,2415-Z
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 VGS = 20 0 V IAS 8.0 A
IAS - Single Avalanche Energy - mJ
dt - Energy Derating Factor - %
80
10
IAS = 8.0 A
EAS
60
=6
.4 m J
40
1.0 VDD = 30 V VGS = 20 0 V 0.1 RG = 25 10 100
20
0 1m 10 m 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C
L - Inductive Load - H
6
Data Sheet D13207EJ2V0DS
2SK2415,2415-Z
* The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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